BAS170W datasheet(2/4 Pages) SIEMENS

No. de pieza	BAS170W

Descripción Electrónicos	Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)

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Fabricante Electrónico	SIEMENS [Siemens Semiconductor Group]

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BAS 170W

Semiconductor Group

2

Edition A01, 11.07.94

Electrical Characteristics

at

TA = 25

°C, unless otherwise specified.

Parameter

Symbol

Value

Unit

min.

typ.

max.

DC Characteristics

Breakdown voltage

I(BR) = 10

µA

V(BR)

70

-

V

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 15 mA

VF

300

600

750

375

705

880

410

750

1000

mV

Reverse current

VR = 50 V

VR = 70 V

IR

-

0.1

10

µA

Diode capacitance

VR = 0 V, f = 1 MHz

CT

-

1.5

2

pF

Charge carrier life time

IF = 25 mA

I

-

100

ps

Differential forward resistance

IF = 10 mA, f = 10 kHz

RF

-34

-

Ω

Series inductance

LS

-2

-

nH

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BAS170W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

BAS170W Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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