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BAS40-04W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

No. de pieza BAS40-04W
Descripción Electrónicos  Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BAS40-04W Datasheet(HTML) 2 Page - Siemens Semiconductor Group

  BAS40-04W Datasheet HTML 1Page - Siemens Semiconductor Group BAS40-04W Datasheet HTML 2Page - Siemens Semiconductor Group BAS40-04W Datasheet HTML 3Page - Siemens Semiconductor Group BAS40-04W Datasheet HTML 4Page - Siemens Semiconductor Group  
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BAS 40W
Semiconductor Group
2
Electrical Characteristics
at
T
A = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
Unit
min.
typ.
max.
DC Characteristics
Breakdown voltage
I
(BR) =10 µA
V
(BR)
40
V
Forward voltage
I
F =1mA
I
F =10mA
I
F =15mA
V
F
250
350
600
310
450
720
380
500
1000
mV
Reverse current
V
R =30V
V
R =40V
I
R
1
10
µA
Diode capacitance
V
R =0V, f = 1 MHz
C
T
–35
pF
Charge carrier life time
I
F =25mA
τ
–10
ps
Differential forward resistance
I
F =10mA, f =10kHz
R
F
–10
Series inductance
L
S
–2–nH


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