Nombre de pieza
         Descripción
BAS70-04S

 Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) ( 4 Page)


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BAS 70-04S
Semiconductor Group
Sep-07-1998
3
Forward current
IF = f (VF)
TA = Parameter
0.0
EHB00042
BAS 70W/BAS 170W
Ι
V
F
F
10 -1
-2
10
0
10
1
10
2
10
mA
0.5
1.0
V
1.5
TA = -40 C
25 C
85 C
150 C
Reverse current
IR = f (VR)
TA = Parameter
0
EHB00043
Ι
V
R
R
10 -1
-3
10
0
10
1
10
2
10
A
10 -2
20
40
60
V
80
TA = 150 C
85 C
25 C
µ
BAS 70W/BAS 170W
Diode capacitance
CT = f (VR)
f = 1MHz
0
0.0
EHB00044
C
V
R
T
20
40
60
V
80
0.5
1.0
1.5
pF
2.0
BAS 70W/BAS 170W
Differential forward resistance
rf = f (IF)
f = 10 kHz
0.1
10
EHB00045
r
Ι
f
1
10
mA
100
F
0
1
10
2
10
3
10
Ω
BAS 70W/BAS 170W
Semiconductor Group
3
1998-11-01
1  2  3  4 



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