SD103AW-V, SD103BW-V, SD103CW-V

Document Number 85681

Rev. 1.4, 05-Aug-10

Vishay Semiconductors

www.vishay.com

1

17431

For technical questions within your region, please contact one of the following:

Small Signal Schottky Diodes

Features

• The low forward voltage drop and fast

switching make it ideal for protection of

MOS devices, steering, biasing, and

coupling diodes for fast switching and

low logic level applications.

• Other applications are click suppression,

efficient full wave bridges in telephone

subsets,

and

blocking

diodes

in

rechargeable low voltage battery systems.

• The SD103 series is a metal-on-silicon Schottky

barrier device which is protected by a PN junction

guard ring.

• This diode is also available in the MiniMELF case

with the type designations LL103A to LL103C,

DO-35 case with the type designations SD103A to

SD103C

and

SOD-323

case

with

type

designations SD103AWS-V to SD103CWS-V.

• For general purpose applications

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Mechanical Data

Case: SOD-123

Weight: approx. 10.3 mg

Packaging codes/options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Absolute Maximum Ratings

Note

Thermal Characteristics

Note

Part

Ordering code

Type marking

Remarks

SD103AW-V

SD103AW-V-GS18 or SD103AW-V-GS08

S6

Tape and reel

SD103BW-V

SD103BW-V-GS18 or SD103BW-V-GS08

S7

Tape and reel

SD103CW-V

SD103CW-V-GS18 or SD103CW-V-GS08

S8

Tape and reel

Parameter

Test condition

Part

Symbol

Value

Unit

Peak reverse voltage

SD103AW-V

40

V

SD103BW-V

30

V

SD103CW-V

20

V

Power dissipation

(Infinite heat sink)

mW

Single cycle surge

10 µs square wave

2A

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to ambient air

K/W

Junction temperature

125

°C

Storage temperature range

- 55 to + 150

°C