Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

SI1012R Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI1012R
Descripción Electrónicos  N-Channel 1.8 V (G-S) MOSFET
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1012R Datasheet(HTML) 1 Page - Vishay Siliconix

  SI1012R Datasheet HTML 1Page - Vishay Siliconix SI1012R Datasheet HTML 2Page - Vishay Siliconix SI1012R Datasheet HTML 3Page - Vishay Siliconix SI1012R Datasheet HTML 4Page - Vishay Siliconix SI1012R Datasheet HTML 5Page - Vishay Siliconix SI1012R Datasheet HTML 6Page - Vishay Siliconix SI1012R Datasheet HTML 7Page - Vishay Siliconix SI1012R Datasheet HTML 8Page - Vishay Siliconix SI1012R Datasheet HTML 9Page - Vishay Siliconix Next Button
Zoom Inzoom in Zoom Outzoom out
 1 / 10 page
background image
Vishay Siliconix
Si1012R/X
Document Number: 71166
S10-2432-Rev. D, 25-Oct-10
www.vishay.com
1
N-Channel 1.8 V (G-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET: 1.8 V Rated
Gate-Source ESD Protected: 2000 V
High-Side Switching
Low On-Resistance: 0.7
Low Threshold: 0.8 V (typ.)
Fast Switching Speed: 10 ns
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
PRODUCT SUMMARY
VDS (V)
RDS(on) ()ID (mA)
20
0.70 at VGS = 4.5 V
600
0.85 at VGS = 2.5 V
500
1.25 at VGS = 1.8 V
350
Top View
2
1
S
D
G
3
SC-75A or SC-89
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board.
ORDERING INFORMATION
Part Number
Package
Marking
Code
Si1012R-T1-GE3 (Lead (Pb)-free
and Halogen-free)
SC-75A
(SOT-416)
C
Si1012X-T1-GE3 (Lead (Pb)-free
and Halogen-free)
SC-89
(SOT-490)
A
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s
Steady State
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
± 6
Continuous Drain Current (TJ = 150 °C)
b
TA = 25 °C
ID
600
500
mA
TA = 85 °C
400
350
Pulsed Drain Currenta
IDM
1000
Continuous Source Current (Diode Conduction)b
IS
275
250
Maximum Power Dissipationb for SC-75
TA = 25 °C
PD
175
150
mW
TA = 85 °C
90
80
Maximum Power Dissipationb for SC-89
TA = 25 °C
275
250
TA = 85 °C
160
140
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Gate-Source ESD Rating (HBM, Method 3015)
ESD
2000
V


Número de pieza similar - SI1012R

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI1012R VISHAY-SI1012R Datasheet
50Kb / 5P
   N-Channel 1.8-V (G-S) MOSFET
Rev. A, 25-Oct-00
SI1012R VISHAY-SI1012R Datasheet
94Kb / 6P
   N-Channel 1.8-V (G-S) MOSFET
Rev. B, 28-Feb-05
SI1012R VISHAY-SI1012R Datasheet
108Kb / 6P
   N-Channel 1.8-V (G-S) MOSFET
Rev. C, 07-Jul-08
SI1012R VISHAY-SI1012R Datasheet
235Kb / 11P
   N-Channel 1.8 V (G-S) MOSFET
Rev. E, 15-Apr-13
SI1012R VISHAY-SI1012R Datasheet
172Kb / 8P
   N-Channel 1.8 V (G-S) MOSFET
Rev. E, 15-Apr-13
More results

Descripción similar - SI1012R

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
Vishay Siliconix
SI1012R VISHAY-SI1012R Datasheet
50Kb / 5P
   N-Channel 1.8-V (G-S) MOSFET
Rev. A, 25-Oct-00
SI1012R VISHAY-SI1012R_05 Datasheet
94Kb / 6P
   N-Channel 1.8-V (G-S) MOSFET
Rev. B, 28-Feb-05
SI1012R VISHAY-SI1012R_17 Datasheet
172Kb / 8P
   N-Channel 1.8 V (G-S) MOSFET
Rev. E, 15-Apr-13
logo
Leshan Radio Company
LSI1012XT1G LRC-LSI1012XT1G_15 Datasheet
324Kb / 6P
   N-Channel 1.8-V (G-S) MOSFET
LSI1012LT1G LRC-LSI1012LT1G_15 Datasheet
457Kb / 6P
   N-Channel 1.8-V (G-S) MOSFET
LSI1012N3T5G LRC-LSI1012N3T5G_15 Datasheet
398Kb / 6P
   N-Channel 1.8-V (G-S) MOSFET
LSI1012XT1G LRC-LSI1012XT1G Datasheet
341Kb / 6P
   N-Channel 1.8-V (G-S) MOSFET
LSI1012LT1G LRC-LSI1012LT1G Datasheet
442Kb / 5P
   N-Channel 1.8-V (G-S) MOSFET
LSI1012N3T5G LRC-LSI1012N3T5G Datasheet
323Kb / 5P
   N-Channel 1.8-V (G-S) MOSFET
logo
First Silicon Co., Ltd
FTK1012S FS-FTK1012S Datasheet
353Kb / 5P
   N-Channel 1.8-V (G-S) MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com