SI1022R_10 datasheet(2/7 Pages) VISHAY

No. de pieza	SI1022R

Descripción Electrónicos	N-Channel 60 V (D-S) MOSFET

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Document Number: 71331

S10-2687-Rev. F, 22-Nov-10

Vishay Siliconix

Si1022R

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 10 µA

60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 0.25 mA

12.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 10 V

± 150

nA

TJ = 85 °C

± 500

VDS = 0 V, VGS = ± 5 V

± 20

Zero Gate Voltage Drain Current

IDSS

VDS = 50 V, VGS = 0 V

10

TJ = 85 °C

100

VDS = 60 V, VGS = 0 V

1µA

On-State Drain Currenta

ID(on)

VDS = 10 V, VGS = 4.5 V

500

mA

VDS = 7.5 V, VGS = 10 V

800

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 200 mA

3.0



TJ = 125 °C

5.0

VGS = 10 V, ID = 500 mA

1.25

TJ = 125 °C

2.25

Forward Transconductancea

gfs

VDS = 10 V, ID = 200 mA

100

mS

Diode Forward Voltagea

VSD

VGS = 0 V, IS = 200 mA

1.3

V

Dynamicb

Input Capacitance

Ciss

VDS = 25 V, VGS = 0 V, f = 1 MHz

30

pF

Output Capacitance

Coss

6

Reverse Transfer Capacitance

Crss

2.5

Gate Charge

Qg

VDS = 10 V, ID = 250 mA, VGS = 4.5 V

0.6

nC

Switchingb, c

Turn-On Time

t(on)

VDD = 30 V, RL = 150 ,

ID = 200 mA, VGEN = 10 V, Rg = 10 

25

ns

Turn-Off Time

t(off)

35

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