SI1035X_10 datasheet(2/10 Pages) VISHAY

No. de pieza	SI1035X

Descripción Electrónicos	Complementary N- and P-Channel 20 V (D-S) MOSFET

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Document Number: 71426

S10-2544-Rev. C, 08-Nov-10

Vishay Siliconix

Si1035X

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.40

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.40

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 2.8 V

N-Ch

± 0.5

± 1.0

µA

P-Ch

± 0.5

± 1.0

VDS = 0 V, VGS = ± 4.5 V

N-Ch

± 1.5

± 3.0

P-Ch

± 1.0

± 3.0

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

N-Ch

1

500

nA

VDS = - 16 V, VGS = 0 V

P-Ch

- 1

- 500

VDS = 16 V, VGS = 0 V, TJ = 85 °C

N-Ch

10

µA

VDS = - 16 V, VGS = 0 V, TJ = 85 °C

P-Ch

- 10

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

N-Ch

250

mA

VDS = - 5 V, VGS = - 4.5 V

P-Ch

- 200

Drain-Source On-State

Resistancea

RDS(on)

VGS = 4.5 V, ID = 200 mA

N-Ch

5



VGS = - 4.5 V, ID = - 150 mA

P-Ch

8

VGS = 2.5 V, ID = 175 mA

N-Ch

7

VGS = - 2.5 V, ID = 125 mA

P-Ch

12

VGS = 1.8 V, ID = 150 mA

N-Ch

9

VGS = - 1.8 V, ID = - 100 mA

P-Ch

15

VDS = 1.5 V, ID = 40 mA

N-Ch

10

VDS = - 1.5 V, ID = - 30 mA

P-Ch

20

Forward Transconductancea

gfs

VDS = 10 V, ID = 200 mA

N-Ch

0.5

S

VDS = - 10 V, ID = - 150 mA

P-Ch

0.4

Diode Forward Voltagea

VSD

IS = 150 mA, VGS = 0 V

N-Ch

1.2

V

IS = - 150 mA, VGS = 0 V

P-Ch

- 1.2

Dynamicb

Total Gate Charge

Qg

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 150 mA

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 150 mA

N-Ch

750

pC

P-Ch

1500

Gate-Source Charge

Qgs

N-Ch

75

P-Ch

150

Gate-Drain Charge

Qgd

N-Ch

225

P-Ch

450

Turn-On Time

tON

N-Channel

VDD = 10 V, RL = 47 

ID  250 mA, VGEN = 4.5 V, Rg = 10 

N-Ch

75

ns

P-Ch

80

Turn-Off Time

tOFF

P-Channel

VDD = - 10 V, RL = 65 

ID  - 150 mA, VGEN = - 4.5 V, Rg = 10 

N-Ch

75

P-Ch

90

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