SI1551DL datasheet(1/12 Pages) VISHAY

No. de pieza	SI1551DL

Descripción Electrónicos	Complementary 20 V (D-S) MOSFET

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Vishay Siliconix

Si1551DL

Document Number: 71255

S10-0935-Rev. D, 19-Apr-10

www.vishay.com

1

Complementary 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET: 2.5 V Rated

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ.)

N-Channel

20

1.9 at VGS = 4.5 V

0.30

0.72

3.7 at VGS = 2.7 V

0.22

4.2 at VGS = 2.5 V

0.21

P-Channel

- 20

0.995 at VGS = - 4.5 V

- 0.44

0.52

1.600 at VGS = - 2.7 V

- 0.34

1.800 at VGS = - 2.5 V

- 0.32

Ordering Information: Si1551DL-T1-E3 (Lead (Pb)-free)

Si1551DL-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

RD

XX

Lot Traceability

and Date Code

Part # Code

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

S1

G1

D2

D1

G2

S2

Notes:

a. Surface mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

5 s

Steady State

5 s

Steady State

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

0.30

0.29

- 0.44

- 0.41

A

TA = 85 °C

0.22

0.21

- 0.31

- 0.30

Pulsed Drain Current

IDM

0.6

- 1.0

Continuous Source Current (Diode Conduction)a

IS

0.25

0.23

- 0.25

- 0.23

Maximum Power Dissipationa

TA = 25 °C

PD

0.30

0.27

0.30

0.27

W

TA = 85 °C

0.16

0.14

0.16

0.14

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

360

415

°C/W

Steady State

400

460

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

300

350

Número de pieza similar - SI1551DL

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SI1551DL Datasheet(PDF) 1 Page - Vishay Siliconix

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