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SI2319CDS Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI2319CDS
Descripción Electrónicos  P-Channel 40 V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
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SI2319CDS Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 66855
www.vishay.com
S10-1602-Rev. A, 19-Jul-10
1
P-Channel 40 V (D-S) MOSFET
SPICE Device Model Si2319CDS
Vishay Siliconix
DESCRIPTION
The attached SPICE model describes the typical electrical
characteristics of the p-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to + 125 °C temperature ranges under the pulsed 0 V to 10 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge
characteristics
while
avoiding
convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
•Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to + 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
D
S
DBD
CGS
M1
G
3
R1
M2
Gx
RG
CGD
Gy
ETCV
+ –


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