SI3477DV datasheet(3/11 Pages) VISHAY

No. de pieza	SI3477DV

Descripción Electrónicos	P-Channel 12 V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 70865

S10-1536-Rev. A, 19-Jul-10

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Vishay Siliconix

Si3477DV

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

10

20

30

40

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 V thru 2.5 V

VGS =1.5 V

VGS =2V

VGS =1V

V

DS - Drain-to-Source Voltage (V)

0.01

0.02

0.03

0.04

0.05

0.06

010

20

30

40

VGS =2.5 V

VGS = 4.5 V

VGS = 1.8 V

I

D - Drain Current (A)

0

2

4

6

8

10

0

102030

405060

ID =9A

VDS =3V

VDS =6V

VDS =9.6 V

Q

g - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.3

0.6

0.9

1.2

1.5

TC = 25 °C

TC = 125 °C

TC = - 55 °C

V

GS - Gate-to-Source Voltage (V)

Coss

0

1000

2000

3000

4000

0246

8

10

12

Ciss

Crss

V

DS - Drain-to-Source Voltage (V)

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

- 50

- 25

0

25

50

75

100

125

150

VGS =1.8 V; ID =2.2 A

T

J - Junction Temperature (°C)

VGS =4.5 V, 2.5V; ID =9A

Número de pieza similar - SI3477DV

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VBsemi Electronics Co.,...	SI3477DV-T1-GE3	1,000Kb / 9P	P-Channel 30-V (D-S) MOSFET
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Vishay Siliconix	SI3477DV	257Kb / 11P	P-Channel 12 V (D-S) MOSFET 01-Jan-2022

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SI3477DV Datasheet(PDF) 3 Page - Vishay Siliconix

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