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SI4200DY Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4200DY Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 66825 S10-2005-Rev. A, 06-Sep-10 www.vishay.com 3 Vishay Siliconix Si4200DY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 VGS =10Vthru 4V VGS =3V V DS - Drain-to-Source Voltage (V) 0.012 0.017 0.022 0.027 0.032 0 6 12 18 24 30 VGS =10V VGS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0 2468 10 ID =7.3 A VDS =6.25V VDS = 12.5 V VDS =20V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 TC = - 55 °C TC = 125 °C TC = 25 °C V GS - Gate-to-Source Voltage (V) Crss 0 150 300 450 600 0 5 10 15 20 25 Ciss Coss V DS - Drain-to-Source Voltage (V) 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 VGS =10V; ID =7.3 A VGS =4.5 V; ID =6.7 A T J - Junction Temperature (°C) |
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