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SI4446DY-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

No. de pieza SI4446DY-T1-E3
Descripción Electrónicos  N-Channel 40-V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
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SI4446DY-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 73661
S09-0322-Rev. B, 02-Mar-09
Vishay Siliconix
Si4446DY
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.6
1.6
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
40
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 3.8
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
µA
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5.2 A
0.033
0.040
Ω
VGS = 4.5 V, ID = 4.9 A
0.037
0.045
Forward Transconductancea
gfs
VDS = 15 V, ID = 5.2 A
18
S
Diode Forward Voltagea
VSD
IS = 1.7 A, VGS = 0 V
0.75
1.2
V
Dynamicb
Input Capacitance
Ciss
VDS = 20 V, VGS = 0 V, f = 1 MHz
700
pF
Output Capacitance
Coss
76
Reverse Transfer Capacitance
Crss
45
Total Gate Charge
Qg
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A
812
nC
Gate-Source Charge
Qgs
1.5
Gate-Drain Charge
Qgd
2.4
Gate Resistance
Rg
f = 1 MHz
1.9
2.9
Ω
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
711
ns
Rise Time
tr
11
17
Turn-Off DelayTime
td(off)
27
40
Fall Time
tf
813
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, dI/dt = 100 A/µs
25
40
Body Diode Reverse Recovery Charge
Qrr
17
26
nC


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