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SI4501BDY Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4501BDY Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 15 page Vishay Siliconix Si4501BDY Document Number: 67441 S11-0245-Rev. A, 14-Feb-11 www.vishay.com 1 Complementary (N- and P-Channel) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Level Shift • Load Switch PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) N-Channel 30 0.017 at VGS = 10 V 12 7.9 0.020 at VGS = 4.5 V 11 P-Channel - 8 0.027 at VGS = - 4.5 V - 8 16.5 0.037 at VGS = - 2.5 V - 6.8 S1 D G1 D S2 D G2 D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 G2 G1 S1 D Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 95 °C/W (N-Channel) and 110 °C/W (P-Channel). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 - 8 V Gate-Source Voltage VGS ± 20 ± 8 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 12 - 8 A TC = 70 °C 9.5 - 6.4 TA = 25 °C 9b, c - 6.4b, c TA = 70 °C 7.2b, c - 5.1b, c Pulsed Drain Current (10 µs Pulse Width) IDM 40 - 40 Source-Drain Current Diode Current TC = 25 °C IS 4.0 - 2.8 TA = 25 °C 2.2b, c - 1.8b, c Pulsed Source-Drain Current ISM 40 - 40 Single Pulse Avalanche Current L = 0.1 mH IAS 5- 5 Single Pulse Avalanche Energy EAS 1.25 1.25 mJ Maximum Power Dissipation TC = 25 °C PD 4.5 3.1 W TC = 70 °C 2.8 2.0 TA = 25 °C 2.5b, c 2b, c TA = 70 °C 1.6b, c 1.28b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t 10 s RthJA 40 50 52 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 22 28 32 40 |
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