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SI4564DY-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

No. de pieza SI4564DY-T1-GE3
Descripción Electrónicos  N- and P-Channel 40 V (D-S) MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4564DY-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix

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Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
www.vishay.com
3
Vishay Siliconix
Si4564DY
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Dynamica
Turn-On Delay Time
td(on)
N-Channel
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
P-Channel
VDD = - 20 V, RL = 2 Ω
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω
N-Ch
7
14
ns
P-Ch
9
18
Rise Time
tr
N-Ch
10
20
P-Ch
9
18
Turn-Off Delay Time
td(off)
N-Ch
18
36
P-Ch
50
90
Fall Time
tf
N-Ch
9
18
P-Ch
14
28
Turn-On Delay Time
td(on)
N-Channel
VDD = 20 V, RL = 2 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 20 V, RL = 2 Ω
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
11
22
P-Ch
42
75
Rise Time
tr
N-Ch
15
30
P-Ch
40
70
Turn-Off Delay Time
td(off)
N-Ch
23
46
P-Ch
40
70
Fall Time
tf
N-Ch
13
26
P-Ch
15
30
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
N-Ch
2.6
A
P-Ch
- 2.6
Pulse Diode Forward Currenta
ISM
N-Ch
40
P-Ch
- 40
Body Diode Voltage
VSD
IS = 2 A
N-Ch
0.74
1.2
V
IS = - 2 A
P-Ch
- 0.77
- 1.2
Body Diode Reverse Recovery Time
trr
N-Channel
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
P-Channel
IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C
N-Ch
17
34
ns
P-Ch
30
60
Body Diode Reverse Recovery Charge
Qrr
N-Ch
10
20
nC
P-Ch
26
52
Reverse Recovery Fall Time
ta
N-Ch
10
ns
P-Ch
15
Reverse Recovery Rise Time
tb
N-Ch
7
P-Ch
15


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