SI4654DY datasheet(5/10 Pages) VISHAY

No. de pieza	SI4654DY

Descripción Electrónicos	N-Channel 25-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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5 / 10 page

Document Number: 69813

S09-0138-Rev. C, 02-Feb-09

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Vishay Siliconix

Si4654DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

6

13

19

26

32

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Foot

0.0

1.5

3.0

4.5

6.0

7.5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.00

0.36

0.72

1.08

1.44

1.80

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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Descripción similar - SI4654DY

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI4668DY	103Kb / 7P	N-Channel 25-V (D-S) MOSFET Rev. B, 09-Mar-09
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SI4654DY Datasheet(PDF) 5 Page - Vishay Siliconix

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Número de pieza similar - SI4654DY

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