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BAW56 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

No. de pieza BAW56
Descripción Electrónicos  Silicon Switching Diode Array (For high-speed switching applications Common anode)
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BAW56 Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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BAW 56
Semiconductor Group
2
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Test circuit for reverse recovery time
Pulse generator:
tp = 100 ns, D = 0.05
Oscillograph:
R = 50
tr = 0.6 ns, Rj = 50
tr = 0.35 ns
C
1pF
V
Breakdown voltage
I(BR) = 100
µA
V(BR)
70
mV
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
VF
715
855
1000
1250
µA
Reverse current
VR = 70 V
VR = 25 V, TA = 150 ˚C
VR = 70 V, TA = 150 ˚C
IR
2.5
30
50
pF
Diode capacitance
VR = 0 V, f = 1 MHz
CD
––2
ns
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100
measured at IR = 1 mA
trr
––6
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
AC characteristics


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