SI4752DY-T1-GE3 datasheet(3/10 Pages) VISHAY

No. de pieza	SI4752DY-T1-GE3

Descripción Electrónicos	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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3 / 10 page

Document Number: 66819

S10-2008-Rev. A, 06-Sep-10

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Vishay Siliconix

Si4752DY

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

16

32

48

64

80

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 10 V thru 4 V

VGS =3V

VGS =2V

V

DS - Drain-to-Source Voltage (V)

0.004

0.005

0.006

0.007

0.008

0.009

0

16324864

80

VGS =10V

VGS =4.5 V

I

D - Drain Current (A)

0

2

4

6

8

10

0

6

12

18

24

30

ID =10A

VDS =15V

VDS =10V

VDS =20V

Q

g - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TC = - 55 °C

TC = 125 °C

TC = 25 °C

V

GS - Gate-to-Source Voltage (V)

Crss

0

440

880

1320

1760

2200

0

5

10

15

20

Ciss

Coss

V

DS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50

- 25

0

25

50

75

100

125

150

ID =10A

VGS =10V

VGS =4.5 V

T

J - Junction Temperature (°C)

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SI4752DY-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

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