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SI4816BDY Datasheet(PDF) 7 Page - Vishay Siliconix |
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SI4816BDY Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 13 page Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 www.vishay.com 7 Vishay Siliconix Si4816BDY CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 40 10 1 VSD – Source-to-Drain Voltage (V) TJ = 25 °C 0 25 50 75 100 125 150 VDS = 30 V 10 1 0.00001 TJ – Temperature (°C) VDS = 24 V 1 0.1 0.01 0.0001 0.001 On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 0 2468 10 VGS – Gate-to-Source Voltage (V) ID = 9.5 A Time (s) 0.001 0 1 100 40 60 10 0.1 20 80 0.01 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 TC = 25 °C Single Pulse 0.1 IDM Limited ID(on) Limited * DS(on) Limited by R BVDSS Limited 1 ms 10 ms 100 ms DC 1 s 10 s VDS – > Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified |
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