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SI4850EY-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4850EY-T1-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix Si4850EY Document Number: 71146 S09-1341-Rev. F, 13-Jul-09 www.vishay.com 1 N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 60 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4850EY-T1-E3 (Lead (Pb)-free) Si4850EY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) a TA = 25 °C ID 8.5 6.0 A TA = 70 °C 7.1 5.0 Pulsed Drain Current IDM 40 Avalanche Current IAS 15 Single Pulse Avalanche Energy EAS 11 mJ Maximum Power Dissipationa TA = 25 °C PD 3.3 1.7 W TA = 70 °C 2.3 1.2 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t ≤ 10 s RthJA 36 45 °C/W Steady State 75 90 Maximum Junction-to-Foot (Drain) Steady State RthJF 17 20 |
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