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SI5435BDC Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI5435BDC Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si5435BDC SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 2.2 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 109 A VGS = −10 V, ID = −4.3 A 0.036 0.035 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −1.3 A 0.067 0.067 Ω Forward Transconductance a gfs VDS = −15 V, ID = −4.3 A 9 8 S Diode Forward Voltage a VSD IS = −1.1 A, VGS = 0 V −0.78 −0.80 V Dynamic b Total Gate Charge Qg 13 16 Gate-Source Charge Qgs 2.7 2.7 Gate-Drain Charge Qgd VDS = −15 V, VGS = −10 V, ID = −4.3 A 4.1 4.1 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 73149 S-52525 Rev. B, 12-Dec-05 |
Número de pieza similar - SI5435BDC_05 |
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Descripción similar - SI5435BDC_05 |
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