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SI5504BDC-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI5504BDC-T1-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 12 page Document Number: 74483 S10-0547-Rev. B, 08-Mar-10 www.vishay.com 5 Vishay Siliconix Si5504BDC N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C TJ = 25 °C 1 VSD ) V ( e g a t l o V n i a r D - o t - e c r u o S - 10 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.04 0.08 0.12 0.16 0.20 02 4 6 8 10 ID = 3.1 A VGS - Gate-to-Source Voltage (V) 125 °C 25 °C 0.001 0 1 50 10 30 10 0.01 Time (s) 20 40 0.1 100 1000 0.0001 Safe Operating Area, Junction-to-Ambient 1 0.01 100 1 0.1 0.01 0.1 10 TA = 25 °C Single Pulse 10 ms 1 s, 10 s DC 100 µs 10 1 ms VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Limited by R * DS(on) 100 ms BVDSS Limited |
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