Document Number: 74483

S10-0547-Rev. B, 08-Mar-10

www.vishay.com

5

Vishay Siliconix

Si5504BDC

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

)

V

(

e

g

a

t

l

o

V

n

i

a

r

D

-

o

t

-

e

c

r

u

o

S

-

10

1.2

1.4

1.6

1.8

2.0

2.2

2.4

- 50

- 25

0

25

50

75

100

125

150

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.04

0.08

0.12

0.16

0.20

02

4

6

8

10

125 °C

25 °C

0.001

0

1

50

10

30

10

0.01

Time (s)

20

40

0.1

100

1000

0.0001

Safe Operating Area, Junction-to-Ambient

1

0.01

100

1

0.1

0.01

0.1

10

Single Pulse

10 ms

1 s, 10 s

DC

100 µs

10

1 ms

Limited by R

*

DS(on)

100 ms

BVDSS

Limited