SI5504BDC-T1-GE3 datasheet(1/12 Pages) VISHAY

No. de pieza	SI5504BDC-T1-GE3

Descripción Electrónicos	N- and P-Channel 30 V (D-S) MOSFET

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Vishay Siliconix

Si5504BDC

Document Number: 74483

S10-0547-Rev. B, 08-Mar-10

www.vishay.com

1

N- and P-Channel 30 V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

Qg (Typ)

N-Channel

30

0.065 at VGS = 10 V

4a

2 nC

0.100 at VGS = 4.5 V

4a

P-Channel

- 30

0.140 at VGS = - 10 V

- 3.7

2.2 nC

0.235 at VGS = - 4.5 V

- 2.8

Marking Code

EF

XXX

Lot Traceability

and Date Code

Part #

Code

N-Channel MOSFET

G1

D1

S1

S2

G2

D2

P-Channel MOSFET

Bottom View

1206-8 ChipFET

S1

G1

S2

G2

D1

D2

1

Dual

Ordering Information: Si5504BDC-T1-E3 (Lead (Pb)-free)

Si5504BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequade bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 120 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

30

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

4a

- 3.7

A

TC = 85 °C

3.8

- 2.7

TA = 25 °C

3.7b, c

- 2.5b, c

TA = 85 °C

2.6b, c

- 1.8b, c

Pulsed Drain Current

IDM

10

- 10

Source Drain Current Diode Current

TC = 25 °C

IS

2.5

- 2.5

TA = 25 °C

1.3b, c

- 1.3b, c

Maximum Power Dissipation

TC = 25 °C

PD

3.12

3.1

W

TC = 85 °C

22

TA = 25 °C

1.5b, c

TA = 85 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, f

t

≤ 5 s

RthJA

70

85

70

85

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

33

40

33

40

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC for Portable Applications

•

Load Switch

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