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SI7216DN-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7216DN-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 14 page Document Number: 73771 S11-1142-Rev. C, 13-Jun-11 www.vishay.com 3 Vishay Siliconix Si7216DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 6 A Pulse Diode Forward Currenta ISM 20 Body Diode Voltage VSD IS = 2 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C 50 75 ns Body Diode Reverse Recovery Charge Qrr 40 60 nC Reverse Recovery Fall Time ta 35 ns Reverse Recovery Rise Time tb 15 |
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