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SI7460DP Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI7460DP
Descripción Electrónicos  N-Channel 60-V (D-S) Fast Switching MOSFET
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7460DP Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si7460DP
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
1
N-Channel 60-V (D-S) Fast Switching MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFETs
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
60
0.0096 at VGS = 10 V
18
0.012 at VGS = 4.5 V
16
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free)
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
18
11
A
TA = 70 °C
14
8
Pulsed Drain Current
IDM
40
Continuous Source Current (Diode Conduction)a
IS
4.3
1.6
Avalanche Current
IAS
50
Avalanche Energy
EAS
125
mJ
Maximum Power Dissipationa
TA = 25 °C
PD
5.4
1.9
W
TA = 70 °C
3.4
1.2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 s
RthJA
18
23
°C/W
Steady State
52
65
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.3


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