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SI7634BDP Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7634BDP Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 74031 S-80439-Rev. C, 03-Mar-08 Vishay Siliconix Si7634BDP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 0.9 - 0.6 - 0.3 0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.004 0.008 0.012 0.016 0.020 01 23 45 6 7 8 910 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID = 15 A 0 50 100 150 200 250 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 TA = 25 °C Single Pulse 10 ms 100 ms DC 1 s 10 s Limited by R * DS(on) |
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