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SI7794DP Datasheet(PDF) 5 Page - Vishay Siliconix

No. de pieza SI7794DP
Descripción Electrónicos  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7794DP Datasheet(HTML) 5 Page - Vishay Siliconix

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Document Number: 67692
S11-1150-Rev. A, 13-Jun-11
www.vishay.com
5
Vishay Siliconix
Si7794DP
New Product
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
20
40
60
80
100
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Package Limited
Power, Junction-to-Case
0
12
24
36
48
60
0
255075
100
125
150
T
C - Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
025
50
75
100
125
150
T
A - Ambient Temperature (°C)


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