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SI7850DP Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI7850DP Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Document Number: 71625 S09-0227-Rev. E, 09-Feb-09 www.vishay.com 3 Vishay Siliconix Si7850DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 8 16 24 32 40 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V 0 2 4 6 8 10 048 12 16 20 VDS = 30 V ID = 10.3 A Qg - Total Gate Charge (nC) 2.0 2.5 1 10 50 0.00 0.5 1.0 1.5 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 200 400 600 800 1000 1200 1400 0 102030405060 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 10.3 A TJ - Junction Temperature (°C) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 02468 10 ID = 10.3 A VGS - Gate-to-Source Voltage (V) |
Número de pieza similar - SI7850DP_09 |
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Descripción similar - SI7850DP_09 |
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