Vishay Siliconix

SiA400EDJ

New Product

Document Number: 67844

S11-1148-Rev. A, 13-Jun-11

www.vishay.com

1

This document is subject to change without notice.

N-Channel 30 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

SC-70 Package

- Small Footprint Area

•

Typical ESD Performance 2500 V HBM

•

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch, OVP Switch

•

Boost Converters

•

DC/DC Converters

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

a

30

12

11.6

12

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

D

D

D

G

S

S

2.05 mm

2.05 mm

Ordering Information:

SiA400EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

S

D

G

Marking Code

X X X

A I X

Lot Traceability

and Date code

Part # code

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

± 12

A

Pulsed Drain Current (t = 300 µs)

30

Continuous Source-Drain Diode Current

Avalanche Current

L = 0.1 mH

15

Single Pulse Avalanche

11.25

mJ

Maximum Power Dissipation

19.2

W

12.3

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

 5 s

28

36

°C/W

Maximum Junction-to-Case (Drain)

Steady State

5.3

6.5

RoHS

COMPLIANT