SIB457EDK datasheet(2/9 Pages) VISHAY

No. de pieza	SIB457EDK

Descripción Electrónicos	P-Channel 20-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Document Number: 64816

S09-1497-Rev. B, 10-Aug-09

Vishay Siliconix

SiB457EDK

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 20

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = - 250 µA

- 12

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

2.5

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 0.4

- 1

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 5

µA

VDS = 0 V, VGS = ± 4.5 V

± 0.5

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

VDS = - 20 V, VGS = 0 V, TJ = 55 °C

- 10

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 4.5 V

- 15

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 4.8 A

0.029

0.035

Ω

VGS = - 2.5 V, ID = - 4.0 A

0.040

0.049

VGS = - 1.8 V, ID = - 3.3 A

0.060

0.072

VGS = - 1.5 V, ID = - 1.5 A

0.085

0.130

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 4.8 A

16

S

Dynamicb

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 8 V, ID = - 6.8 A

22

44

nC

Gate-Source Charge

VDS = - 10 V, VGS = - 4.5 V, ID = - 6.8 A

13

26

Qgs

1.2

Gate-Drain Charge

Qgd

3

Gate Resistance

Rg

f = 1 MHz

0.28

1.4

2.8

k

Ω

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1.8 Ω

ID ≅ - 5.5 A, VGEN = - 4.5 V, Rg = 1 Ω

0.34

0.51

us

Rise Time

tr

0.90

1.35

Turn-Off Delay Time

td(off)

3.00

4.50

Fall Time

tf

1.90

2.90

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 1.8 Ω

ID ≅ - 5.5 A, VGEN = - 8 V, Rg = 1 Ω

0.17

0.26

Rise Time

tr

0.45

0.70

Turn-Off Delay Time

td(off)

5.5

8.30

Fall Time

tf

2.00

3.50

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

- 9

A

Pulse Diode Forward Current

ISM

- 25

Body Diode Voltage

VSD

IS = - 5.5 A, VGS = 0 V

- 0.85

- 1.2

V

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