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SS8P6C Datasheet(PDF) 1 Page - Vishay Siliconix |
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SS8P6C Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 89028 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 17-May-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier SS8P5C, SS8P6C Vishay General Semiconductor New Product TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test PRIMARY CHARACTERISTICS IF(AV) 2 x 4.0 A VRRM 50 V, 60 V IFSM 120 A EAS 20 mJ VF at IF = 4 A 0.56 V TJ max. 150 °C TO-277A (SMPC) K 2 1 Anode 1 Anode 2 Cathode K eSMP® Series MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS8P5C SS8P6C UNIT Device marking code S85C S86C Maximum repetitive peak reverse voltage VRRM 50 60 V Maximum average forward rectified current (fig. 1) total device IF(AV) 8.0 A per diode 4.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 120 A Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode EAS 20 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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