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TSFF5510 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza TSFF5510
Descripción Electrónicos  High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5510 Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 81835
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.2, 25-Jun-09
1
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF5510
Vishay Semiconductors
DESCRIPTION
TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm):
∅ 5
• Leads with stand-off
• Peak wavelength:
λ
p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ = ± 38°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high data
transmission rates
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
21061
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
p (nm)
tr (ns)
TSFF5510
32
± 38
870
15
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSFF5510
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
1A
Power dissipation
PV
180
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
≤ 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered on PCB
RthJA
230
K/W


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