Nombre de pieza
         Descripción
BCP71M

 NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) ( 4 Page)


SIEMENS
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BCP 71M
Semiconductor Group
Au -12-1998
4
DC current gain
hFE = f (IC)
VCE = 2V
10
0
10
1
10
2
10
3
10
4
mA
IC
0
10
1
10
2
10
3
10
-
-50°C
25°C
100°C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 V
0.50
VCEsat
0
10
1
10
2
10
3
10
4
10
mA
100°C
25°C
-50°C
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
VBEsat
0
10
1
10
2
10
3
10
4
10
mA
-50°C
25°C
100°C
Collector current
IC = f (VBE)
VCE = 2V
0.0
0.2
0.4
0.6
0.8
1.0
V
1.3
VBE
0
10
1
10
2
10
3
10
4
10
mA
-50°C
25°C
100°C
Semiconductor Group
4
1998-11-01
1  2  3  4 



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