BCX55-16 datasheet(3/5 Pages) SIEMENS

No. de pieza	BCX55-16

Descripción Electrónicos	NPN Silicon AF Transistors (For AF driver and output stages High collector current)

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Fabricante Electrónico	SIEMENS [Siemens Semiconductor Group]

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3 / 5 page

BCX 54 … BCX 56

Semiconductor Group

3

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

–

DC current gain1)

IC = 5 mA, VCE = 2 V

IC = 150 mA, VCE = 2 V

BCX 54, BCX 55, BCX 56

BCX 54-10, BCX 55-10, BCX 56-10

BCX 54-16, BCX 55-16, BCX 56-16

IC = 500 mA, VCE = 2 V

hFE

25

40

63

100

25

–

100

160

–

250

160

250

–

V

Collector-emitter breakdown voltage

IC = 10 mA

BCX 54

BCX 55

BCX 56

V(BR)CE0

45

60

80

–

nA

µA

Collector cutoff current

VCB = 30 V

VCB = 30 V, TA = 150 ˚C

ICB0

–

100

20

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

IC = 100

µA

BCX 54

BCX 55

BCX 56

V(BR)CB0

45

60

100

–

Emitter-base breakdown voltage

IE = 10

µA

V(BR)EB0

5––

V

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat

–

0.5

Base-emitter voltage1)

IC = 500 mA, VCE = 2 V

VBE

––1

nA

Emitter cutoff current

VEB = 4 V

IEB0

––20

MHz

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

fT

–

100

–

AC characteristics

1)

Pulse test: t

≤ 300 µs, D = 2 %.

Número de pieza similar - BCX55-16

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BCX55-16 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

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Número de pieza similar - BCX55-16

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