BFG135A datasheet(6/6 Pages) SIEMENS | NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

Nombre de pieza

Descripción

BFG135A

NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) ( 6 Page)

SIEMENS

6 page

Semiconductor Group

Dec-16-1996

BFG 135A

Power Gain

Gma, Gms = f(VCE):_____

S21|2 = f(VCE):---------

f = Parameter

0.9GHz

1.8GHz

0.9GHz

C=100mA

Intermodulation Intercept Point

IP3=f(IC)

(3rd order, Output,

ZS=ZL=50Ω)

VCE = Parameter, f = 900MHz

100

120

160

dBm

10V

Power Gain

Gma, Gms = f(f)

VCE = Parameter

0.0

0.5

1.0

1.5

2.0

2.5

GHz

3.5

10V

0.7V

C=100mA

Power Gain |

S21|2= f(f)

VCE = Parameter

0.0

0.5

1.0

1.5

2.0

GHz

3.0

-5

10V

0.7

C=100mA

1 2 3 4 5 6

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