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| BFG235 |
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SIEMENS |
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6 page
Semiconductor Group 6 Dec-13-1996 BFG 235 Power Gain Gma, Gms = f(VCE):_____ | S21|2 = f(VCE):--------- f = Parameter 0 2 4 6 8 V 12 V CE 0 2 4 6 8 10 dB 14 G 0.9GHz 1.8GHz 0.9GHz I C=200mA Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50Ω) VCE = Parameter, f = 900MHz 0 50 100 150 200 mA 300 I C 12 14 16 18 20 22 24 26 28 30 32 34 36 38 dBm 42 IP 3 10V 8V 5V 3V 2V 1V Power Gain Gma, Gms = f(f) VCE = Parameter 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 0 5 10 15 20 dB 30 G 10V 2V 1V 0.7V I C=200mA Power Gain | S21|2= f(f) VCE = Parameter 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f -10 -5 0 5 10 15 20 dB 30 S 21 10V 2V 1V 0.7V I C=200mA |
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