Nombre de pieza
         Descripción
BFG235

 NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) ( 6 Page)


SIEMENS
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Semiconductor Group
6
Dec-13-1996
BFG 235
Power Gain
Gma, Gms = f(VCE):_____
|
S21|2 = f(VCE):---------
f = Parameter
0
2
4
6
8
V
12
V
CE
0
2
4
6
8
10
dB
14
G
0.9GHz
1.8GHz
0.9GHz
I
C=200mA
Intermodulation Intercept Point
IP3=f(IC)
(3rd order, Output,
ZS=ZL=50Ω)
VCE = Parameter, f = 900MHz
0
50
100
150
200
mA
300
I
C
12
14
16
18
20
22
24
26
28
30
32
34
36
38
dBm
42
IP
3
10V
8V
5V
3V
2V
1V
Power Gain
Gma, Gms = f(f)
VCE = Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
0
5
10
15
20
dB
30
G
10V
2V
1V
0.7V
I
C=200mA
Power Gain |
S21|2= f(f)
VCE = Parameter
0.0
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
-10
-5
0
5
10
15
20
dB
30
S
21
10V
2V
1V
0.7V
I
C=200mA
1  2  3  4  5  6 



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