Nombre de pieza
         Descripción
BFG235

 NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications) ( 6 Page)


SIEMENS
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Semiconductor Group
4
Dec-13-1996
BFG 235
Total power dissipation
Ptot = f (TA*, TS)
* Package mounted on epoxy
0
20
40
60
80
100
120 °C 150
T
A,TS
0
200
400
600
800
1000
1200
1400
1600
1800
mW
2200
P
tot
T
S
T
A
Permissible Pulse Load
RthJS = f (tp)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
0
10
1
10
2
10
-
P
totmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1  2  3  4  5  6 



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