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UMN1N Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza UMN1N
Descripción Electrónicos  0.025A , 80V Plastic-Encapsulated Switching Diode
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

UMN1N Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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UMN1N
0.025A , 80V
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
19-Aug-2011 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
B
L
F
H
C
J
D G
K
A
E
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Small Mold Type
High Reliability
Silicon Epitaxial Planar
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-353
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameters
Symbol
Rating
Unit
Non-Repetitive Peak Reverse Voltage
VRM
80
V
DC Blocking Voltage
VR
80
V
Forward Continuous Current
IFM
80
mA
Average Rectified Output Current
IO
25
mA
Non-Repetitive Peak Forward Surge Current
t=1.0s
IFSM
250
mA
Operating Junction and Storage Temperature
TJ,TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Test Conditions
Forward Voltage
VF
-
0.9
V
IF=5mA
Maximum DC Reverse Current at rated
DC blocking voltage
IR
-
0.1
µA
VR=70V
Capacitance between terminals
CT
-
3.5
pF
VR=6V, f=1MHz
Maximum Reverse Recovery Time
TRR
-
4
nS
IF=5mA,VR=6V,RL=50
SOT-353
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
2.00
2.20
G
0.100 REF.
B
2.15
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.15
D
0.90
1.10
K
E
1.20
1.40
L
0.650 TYP.
F
0.15
0.35
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