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TS8542VA Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza TS8542VA
Descripción Electrónicos  Specification of High Power IR Emitting Diode Chip
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
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TS8542VA Datasheet(HTML) 1 Page - Vishay Siliconix

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TS8542VA
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 20-Feb-12
1
Document Number: 83474
For technical questions, contact: optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Specification of High Power IR Emitting Diode Chip
DESCRIPTION
TS8542VA is a high power infrared, 850 nm surface emitting
diode in GaAlAs technology with high radiant power and
high speed. Polarity Confoguration is “n-up”.
FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
1.066 x 1.066 x 0.17
• Peak wavelength:
λ = 850 nm
• Compliant
to
RoHS
Directive
2011/65/EU
and
in
accordance to WEEE 2002/96/EC
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample
testing
under
certain
predetermined
and
assumed
conditions, and is provided for illustration purpose only.
Customers are encouraged to perform testing in actual
proposed
packaged
and
used
conditions.
Vishay
optoelectronics die products are tested using Vishay
optoelectronics based quality assurance procedures and
are manufactured using Vishay optoelectronics established
processes. Estimates such as those described and set forth
in this datasheet for semiconductor die will vary depending
on a number of packaging, handling, use, and other factors.
Therefore sold die may not perform on an equivalent basis
to standard package products.
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT
fe (mW)
ϕ (deg)
λp (nm)
tr (ns)
TS8542VA
350
55
850
15
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TS8542VA-SF-F
Wafer sawn on foil
MOQ: 5000 pcs
Chip
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Forward current
IF
1A
Reverse voltage
VR
5V
Surge forward current
tp = 100 μs
IFSM
5A
Junction temperature
Tj
140
°C
Storage temperature range chip
Tstg1
- 40 to + 125
°C
Storage temperature range on foil
Tstg2
- 20 to + 65
°C
Temperature during packaging
tp < 10 s
280
°C


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