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1N4148-P Datasheet(PDF) 1 Page - Vishay Siliconix |
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1N4148-P Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page 1N4148-P Document Number 81873 Rev. 1.1, 17-Aug-10 Vishay Semiconductors www.vishay.com 1 94 9367 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Small Signal Fast Switching Diodes Features • Silicon epitaxial planar diodes • Automotive graded device • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition • Find out more about Vishay‘s Automotive Grade Product requirements at: www.vishay.com/applications Applications • Extreme fast switches Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Thermal Characteristics Tamb = 25 °C, unless otherwise specified Part Ordering code Type Marking Remarks 1N4148-P 1N4148-P-TAP or 1N4148-P-TR V4148 Ammopack/tape and reel Parameter Test condition Symbol Value Unit Repetitive peak reverse voltage VRRM 100 V Reverse voltage VR 75 V Peak forward surge current tp = 1 µs IFSM 2A Repetitive peak forward current IFRM 500 mA Forward continuous current IF 300 mA Average forward current VR = 0 IFAV 150 mA Power dissipation l = 4 mm, TL = 45 °C Ptot 440 mW l = 4 mm, TL ≤ 25 °C Ptot 500 mW Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction temperature Tj 175 °C Storage temperature range Tstg - 65 to + 150 °C |
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