Parameter

l

Value

Unit

Collector-Base Voltage

V

CBO

400

V

Collector-Emitter Voltage

V

CEO

200

V

Emitter-Base Voltage

V

EBO

6

V

Collector Current

I

C

8.0

A

Base Current

I

B

2.0

A

Total Dissipation at

P

tot

60

W

Max. Operating Junction Temperature

T

j

150

Storage Temperature

T

stg

-55~150

BU806

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CES

V

—

—

100

uA

Emitter Cut-off Current

I

EBO

V

—

—

3.5

mA

Collector-Emitter Sustaining Voltage

V

CEO

I

200

—

—

V

DC Current Gain

h

FE(1)

V

200

—

—

Collector-Emitter Saturation Voltage

V

CE(sat)

I

—

—

1.5

V

Base-Emitter Saturation Voltage

V

BE(sat)

I

—

—

2.4

V

Damper Diode Forward Voltage

V

F

I

—

—

2

V

Storage Time

T

S

I

—

0.55

—

us

MEDIUM Voltage & Fast Switching DarlingtonTransistor

Product specification

The devices are silicon Epitaxial Planar NPN power transistors in Darlington

configuration with integrated base-emitter speed-up diode, mounted

in TO-220 plastic package.

They can be used in horizontal output stages of 110

Electrical Characteristics ( Ta = 25

℃ )

Absolute Maximum Ratings ( Ta = 25

℃ )

DESCRIPTION

TO-220

TIGER ELECTRONIC CO.,LTD