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BUZ103SL Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ103SL Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 8 page Semiconductor Group 8 30/Jan/1998 BUZ 103 SL SPP28N05L Avalanche energy E AS = ƒ(Tj) parameter: ID = 28 A, VDD = 25 V RGS = 25 Ω, L = 357 µH 20 40 60 80 100 120 140 °C 180 T j 0 10 20 30 40 50 60 70 80 90 100 110 120 130 mJ 150 E AS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 28 A 0 5 10 15 20 25 30 35 40 nC 50 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V (BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 180 T j 49 51 53 55 57 59 61 V 65 V (BR)DSS |
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