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BUZ10L Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BUZ10L Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
6 / 9 page Semiconductor Group 6 07/96 BUZ 10 L Not for new design Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.0 1.0 2.0 3.0 4.0 V 6.0 V DS 0 5 10 15 20 25 30 35 40 45 A 55 I D V GS [V] a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 6.5 i i 7.0 j j 8.0 k k 9.0 l Ptot = 75W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0 5 10 15 20 25 30 35 A 45 I D 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 Ω 0.22 R DS (on) VGS [V] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 6.5 i i 7.0 j j 8.0 k k 9.0 l l 10.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0 5 10 15 20 25 30 35 40 45 50 A 60 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0 10 20 30 40 A 55 I D 0 2 4 6 8 10 12 14 16 S 20 g fs |
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