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BUZ10L Datasheet(PDF) 6 Page - Siemens Semiconductor Group

No. de pieza BUZ10L
Descripción Electrónicos  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ10L Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
07/96
BUZ 10 L
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter:
tp = 80 µs
0.0
1.0
2.0
3.0
4.0
V
6.0
V
DS
0
5
10
15
20
25
30
35
40
45
A
55
I
D
V
GS
[V]
a
a
3.0
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
h
6.5
i
i
7.0
j
j
8.0
k
k
9.0
l
Ptot = 75W
l
10.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter:
VGS
0
5
10
15
20
25
30
35
A
45
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.22
R
DS (on)
VGS [V] =
a
a
3.0
b
b
3.5
c
c
4.0
d
d
4.5
e
e
5.0
f
f
5.5
g
g
6.0
h
h
6.5
i
i
7.0
j
j
8.0
k
k
9.0
l
l
10.0
Typ. transfer characteristics
ID = f (VGS)
parameter:
tp = 80 µs
VDS≥2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
Typ. forward transconductance
gfs = f (ID)
parameter:
tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0
10
20
30
40
A
55
I
D
0
2
4
6
8
10
12
14
16
S
20
g
fs


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