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BUZ10S2 Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BUZ10S2 Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
8 / 9 page Semiconductor Group 8 07/96 BUZ 10 S2 Not for new design Avalanche energy E AS = ƒ(Tj) parameter: ID = 23 A, VDD = 25 V RGS = 25 Ω, L = 15.1 µH 20 40 60 80 100 120 °C 160 T j 0 1 2 3 4 5 6 7 mJ 9 E AS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 38 A 0 4 8 12 16 20 24 28 34 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V (BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 54 56 58 60 62 64 66 68 V 71 V (BR)DSS |
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