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AM5480N Datasheet(PDF) 1 Page - Analog Power

No. de pieza AM5480N
Descripción Electrónicos  N-Channel 80-V (D-S) MOSFET
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Fabricante Electrónico  ANALOGPOWER [Analog Power]
Página de inicio  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM5480N Datasheet(HTML) 1 Page - Analog Power

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AM5480N
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM5480_A
1
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m( )
ID (A)
82 @ VGS = 10V
±5.4
115 @ VGS = 4.5V
±4.6
PRODUCT SUMMARY
80
N-Channel 80-V (D-S) MOSFET
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DFN2x3-8PP saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
Limit
Units
VDS
80
VGS
±20
TA=25
o
C
±5.4
TA=70
o
C
±4.4
IDM
±25
IS
2
A
TA=25
o
C
3.5
TA=70
o
C
2
TJ, Tstg
-55 to 150
o
C
Drain-Source Voltage
Continuous Drain Current
a
ID
A
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Paramete r
Pulsed Drain Current
b
V
Gate-Source Voltage
Symbol
Maximum
Units
t <= 10 sec
35
o
C/W
Steady State
81
o
C/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
RθJA
S
S
S
G
1
2
3
4
DFN2x3-8PP
Top View
D
D
D
D
8
7
6
5
D
S
G
N-Channel MOSFET


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