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3N40 Datasheet(PDF) 2 Page - Unisonic Technologies

No. de pieza 3N40
Descripción Electrónicos  3A, 400V N-CHANNEL POWER MOSFET
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3N40 Datasheet(HTML) 2 Page - Unisonic Technologies

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3N40
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-553.c
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous (TC=25°C)
ID
3
A
Drain Current
Pulsed (Note 2)
IDM
12
A
Single Pulsed (Note 3)
EAS
290
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
3
mJ
TO-220F
25
W
Power Dissipation
TO-252
50
W
TO-220F
0.2
W/°C
Derate above 25°C
TO-252
PD
0.4
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=56mH, IAS=3.0 A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220F
62.5
Junction to Ambient
TO-252
θJA
110
°C/W
TO-220F
4.9
Junction to Case
TO-252
θJC
2.5
°C/W


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