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TSL25715 Datasheet(PDF) 4 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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TSL25715 Datasheet(HTML) 4 Page - TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS |
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4 / 24 page  TSL2571 LIGHT-TO-DIGITAL CONVERTER TAOS117A − FEBRUARY 2011 4 r r Copyright E 2011, TAOS Inc. The LUMENOLOGY r Company www.taosinc.com Operating Characteristics, VDD = 3 V, TA = 255C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Active 175 250 IDD Supply current Wait mode 65 μA IDD Supply current Sleep mode — no I2C activity 2.5 4 μA V INT SDA output low voltage 3 mA sink current 0 0.4 V VOL INT, SDA output low voltage 6 mA sink current 0 0.6 V I LEAK Leakage current, SDA, SCL, INT pins −5 5 μA V SCL SDA input high voltage TSL25711, TSL25715 0.7 VDD V VIH SCL, SDA input high voltage TSL25713, TSL25717 1.25 V V SCL SDA input low voltage TSL25711, TSL25715 0.3 VDD V VIL SCL, SDA input low voltage TSL25713, TSL25717 0.54 V ALS Characteristics, VDD = 3 V, TA = 255C, Gain = 16, AEN = 1 (unless otherwise noted) (Notes 1 ,2, 3) PARAMETER TEST CONDITIONS CHANNEL MIN TYP MAX UNIT Dark ADC count value Ee = 0, AGAIN = 120 ×, CH0 0 1 5 counts Dark ADC count value Ee = 0, AGAIN = 120 ×, ATIME = 0xDB (100 ms) CH1 0 1 5 counts ADC integration time step size ATIME = 0xFF 2.58 2.72 2.9 ms ADC Number of integration steps 1 256 steps ADC counts per step ATIME = 0xFF 0 1024 counts ADC count value ATIME = 0xC0 0 65535 counts λp = 625 nm, Ee = 171.6 μW/cm2, CH0 4000 5000 6000 ADC count value λp = 625 nm, Ee = 171.6 μW/cm , ATIME = 0xF6 (27 ms) See note 2. CH1 790 counts ADC count value λp = 850 nm, Ee = 219.7 μW/cm2, CH0 4000 5000 6000 counts λp = 850 nm, Ee = 219.7 μW/cm , ATIME = 0xF6 (27 ms) See note 3. CH1 2800 λ 625 nm ATIME 0xF6 (27 ms) See note 2 10 8 15 8 20 8 ADC count value ratio: CH1/CH0 λp = 625 nm, ATIME = 0xF6 (27 ms) See note 2. 10.8 15.8 20.8 % ADC count value ratio: CH1/CH0 λ 850 nm ATIME 0xF6 (27 ms) See note 3 41 56 68 % ADC count value ratio: CH1/CH0 λp = 850 nm, ATIME = 0xF6 (27 ms) See note 3. 41 56 68 % λp = 625 nm, ATIME = 0xF6 (27 ms) CH0 29.1 R Irradiance responsivity λp = 625 nm, ATIME = 0xF6 (27 ms) See note 2. CH1 4.6 counts/ ( μW/ Re Irradiance responsivity λp = 850 nm, ATIME = 0xF6 (27 ms) CH0 22.8 ( μW/ cm2) λp = 850 nm, ATIME = 0xF6 (27 ms) See note 3. CH1 12.7 cm2) Gi li lti t 1 × i 8 × −10 10 Gain scaling, relative to 1 × gain 16 × 10 10 % Gain scaling, relative to 1 × gain setting 16 × −10 10 % setting 120 × −10 10 % NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 625 nm LEDs and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production. 2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength λp = 625 nm and spectral halfwidth Δλ½ = 20 nm. 3. The 850 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength λp = 850 nm and spectral halfwidth Δλ½ = 42 nm. |
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