PZTA42 datasheet(2/4 Pages) SIEMENS

No. de pieza	PZTA42

Descripción Electrónicos	NPN Silicon High-Voltage Transistors

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PZTA 42

PZTA 43

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

DC current gain1)

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

V

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

PZTA 42

PZTA 43

V(BR)CE0

300

200

–

nA

µA

Collector-base cutoff current

VCB = 200 V

PZTA 42

VCB = 160 V

PZTA 43

VCB = 200 V, TA = 150 ˚C

PZTA 42

VCB = 160 V, TA = 150 ˚C

PZTA 43

ICB0

–

100

20

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Emitter-base breakdown voltage

IE = 100

µA, IC = 0

V(BR)EB0

6––

V

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

PZTA 42

PZTA 43

VCEsat

–

0.5

0.4

–

hFE

25

40

–

MHz

Transition frequency

IC = 20 mA, VCE = 10 V, f = 100 MHz

fT

–70

–

AC characteristics

pF

Collector-base capacitance

VCB = 20 V, f = 1 MHz

PZTA 42

PZTA 43

Cobo

–

3

4

Collector-base breakdown voltage

IC = 100

µA, IB = 0

PZTA 42

PZTA 43

V(BR)CB0

300

200

–

nA

Emitter-base cutoff current

VEB = 3 V, IC = 0

IEB0

–

100

Base-emitter saturation voltage

IC = 20 mA, IB = 2 mA

VBEsat

–

0.9

1)

Pulse test conditions: t

≤ 300 µs, D = 2 %.

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PZTA42 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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