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CSD16342Q5A Datasheet(PDF) 2 Page - Texas Instruments

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No. de pieza CSD16342Q5A
Descripción Electrónicos  N-Channel NexFET??Power MOSFETs
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD16342Q5A Datasheet(HTML) 2 Page - Texas Instruments

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CSD16342Q5A
SLPS369A – FEBRUARY 2012 – REVISED MARCH 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, IDS = 250μA
25
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 20V
1
μA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +10/-8V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, IDS = 250μA
0.6
0.85
1.1
V
VGS = 2.5V, IDS = 20A
6.1
7.8
m
RDS(on)
Drain to Source On Resistance
VGS = 4.5V, IDS = 20A
4.3
5.5
m
VGS = 8V, IDS = 20A
3.8
4.7
m
gfs
Transconductance
VDS = 15V, IDS = 20A
91
S
Dynamic Characteristics
CISS
Input Capacitance
1050
1350
pF
COSS
Output Capacitance
VGS = 0V, VDS = 12.5V, f = 1MHz
730
950
pF
CRSS
Reverse Transfer Capacitance
53
69
pF
Rg
Series Gate Resistance
1.5
3
Qg
Gate Charge Total (4.5V)
6.8
7.1
nC
Qgd
Gate Charge Gate to Drain
0.9
nC
VDS = 12.5V, ID = 20A
Qgs
Gate Charge Gate to Source
1.9
nC
Qg(th)
Gate Charge at Vth
1.2
nC
QOSS
Output Charge
VDS = 13V, VGS = 0V
13.7
nC
td(on)
Turn On Delay Time
5.2
ns
tr
Rise Time
16.6
ns
VDS = 12.5V, VGS = 4.5V ID = 20A
RG = 2Ω
td(off)
Turn Off Delay Time
13.4
ns
tf
Fall Time
3.1
ns
Diode Characteristics
VSD
Diode Forward Voltage
IS = 20A, VGS = 0V
0.8
1
V
Qrr
Reverse Recovery Charge
14.5
nC
VDD = 13V, IF = 20A, di/dt = 300A/μs
trr
Reverse Recovery Time
20
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance Junction to Case(1)
1.2
°C/W
RθJA
Thermal Resistance Junction to Ambient(1)(2)
50
°C/W
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
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Product Folder Link(s): CSD16342Q5A


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