CSD16321Q5

SLPS220B – AUGUST 2009 – REVISED MAY 2010

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

Drain to Source Voltage

25

V

Drain to Source Leakage Current

1

mA

Gate to Source Leakage Current

100

nA

Gate to Source Threshold Voltage

0.9

1.1

1.4

V

2.8

3.8

m

Ω

Drain to Source On Resistance

2.1

2.6

m

Ω

1.9

2.4

m

Ω

Transconductance

150

S

Dynamic Characteristics

Input Capacitance

2360

3100

pF

Output Capacitance

1700

2200

pF

f = 1MHz

Reverse Transfer Capacitance

115

150

pF

Series Gate Resistance

1.5

3

Ω

Gate Charge Total (4.5V)

14

19

nC

Gate Charge Gate to Drain

2.5

nC

Gate Charge Gate to Source

4

nC

Gate Charge at Vth

2.1

nC

Output Charge

36

nC

Turn On Delay Time

9

ns

Rise Time

15

ns

Turn Off Delay Time

27

ns

Fall Time

17

ns

Diode Characteristics

Diode Forward Voltage

0.8

1

V

Reverse Recovery Charge

33

nC

Reverse Recovery Time

32

ns

THERMAL CHARACTERISTICS

PARAMETER

MIN

TYP

MAX

UNIT

1.1

°C/W

48

°C/W

(1)

(2)

2

Submit Documentation Feedback

Copyright © 2009–2010, Texas Instruments Incorporated

Product Folder Link(s): CSD16321Q5