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CSD16327Q3 Datasheet(PDF) 4 Page - Texas Instruments |
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CSD16327Q3 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 11 page 0 10 20 30 40 50 60 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage - V VGS =8.0V VGS =4.5V VGS =3.5V VGS =2.5V VGS =2.0V G001 0.001 0.01 0.1 1 10 100 1 1.5 2 2.5 3 VGS - Gate-to-Source Voltage - V TC = 125°C TC = 25°C TC = −55°C VDS = 5V G001 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 Qg - Gate Charge - nC (nC) ID =24A VDD = 12.5V G001 0.01 0.1 1 10 100 0 5 10 15 20 VDS - Drain-to-Source Voltage - V Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd G001 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 −75 −25 25 75 125 175 TC - Case Temperature - ºC ID = 250µA G001 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage - V TC = 25°C TC = 125ºC ID = 24A G001 CSD16327Q3 SLPS371 – DECEMBER 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics Figure 4. Gate Charge Figure 5. Capacitance Figure 6. Threshold Voltage vs. Temperature Figure 7. On Resistance vs. Gate Voltage 4 Submit Documentation Feedback Copyright © 2011, Texas Instruments Incorporated Product Folder Link(s): CSD16327Q3 |
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